Key Features
30 to 40 GHz bandwidth
> 33 dBm nominal Psat @ Pin = 20dBm
18 dB nominal gain
Bias: 6 V, 1050 mA Idq (1.9 A under RF Drive)
0.15 um 3MI pHEMT technology
Chip dimensions: 2.79 x 2.315 x 0.1 mm (0.110 x 0.091 x 0.004 in)
Description
The TriQuint TGA4516 is a high power amplifier (HPA) MMIC for Ka band applications. The part is designed using TriQuint's 0.15um power pHEMT process. The small chip size is achieved by utilizing TriQuint's 3 metal layer interconnect (3MI) design technology that allows compaction of the design over competing products. The TGA4516 provides > 33 dBm saturated output power and has typical gain of 18 dB at a bias of 6 V and 1050 mA (Idq). The current rises to 1. 9A under RF drive.
This HPA is ideally suited for many applications such as military radar systems, Ka band satellite communications, and point-to-point radios.
The TGA4516 is 100% DC and RF tested on-wafer to ensure performance compliance. The part is lead-free and RoHS compliant.
Specifications
Frequency (GHz)30 to 40
Power (dBm)33
Gain (dB)18
NF (dB)
PAE (%)
Voltage (V)6
IQ (mA)1,050
RoHS Yes
Lead Free Yes
Halogen Free Yes
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